ZDV287 smd type diodes unit: mm sod-323 1.7 +0.1 -0.1 2.6 +0.1 -0.1 1.3 +0.1 -0.1 0.1 +0.05 -0.02 0.475 0.375 0.3 +0.05 -0.05 0.85 +0.05 -0.05 1.0max silicon epitaxial planar diode features high capacitance ratio : c2v/c25v=7.6(typ.) low series resistance : r s =1.9 (typ.) excellent c-v characteristics, and small tracking error. useful for small size tuner. absolute maximum ratings ta = 25 parameter symbol value unit reverse voltage v r 30 v peak reverse voltage v rm 35 (r l =10k ) v junction temperature t j 125 storage temperature range t stg -55to+125 electrical characteristics ta = 25 parameter symbol conditions min typ max unit reverse voltage v r i r =1 a 30 v reverse current i r v r = 28 v 10 na c 2v f=1mhz;v r =2v 4.2 5.7 c 25v f=1mhz;v r = 25 v 0.53 0.68 capacitance ratio c 2v /c 25v 7.3 series resistance r s v r = 5v, f = 470 mhz 1.9 2.3 note : available in matched group for capacitance to 6%. c(max.)-c(min.) c(min.) (v r =2~25v) capacitance 0.06 pf marking marking up
|
